一种用于中子自旋翻转器的多层中子薄膜自旋翻转元件及其制作方法
Affilication of Author(s):物理科学与工程学院
Disigner of the Invention:张众,何佳莲,伊圣振,王占山,黄秋实
Type of Patent:发明
State of Patent:实审请求
Application Number:202210840993.8
Number of Inventors:5
Service Invention or Not:no
Application Date:2022-07-18
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