The optimization of the doping level of boron, silicon and nitrogen doped diamond film on Co-cemented tungsten carbide inserts
Release time:
Hits:
Impact Factor:1.453
Affiliation of Author(s):机械与能源工程学院
Journal:Physica B: Condensed Matter
Place of Publication:PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Indexed by:Periodical papers
Correspondence Author:Liang Wang
Volume:550
Page Number:280-293
ISSN No.:0921-4526
Translation or Not:no
Date of Publication:2018-01-01
Included Journals:EI、SCOPUS、WOS、CNKI