一种坩埚下降法生长氧化镓体单晶的方法及其生长装置
Release time:2022-07-09
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Affilication of Author(s):物理科学与工程学院
Disigner of the Invention:唐慧丽,徐军,罗平,吴锋,王庆国,张超逸,薛艳艳
Type of Patent:实用新型
State of Patent:官方授权
Application Number:202121599601.0
Number of Inventors:7
Service Invention or Not:no
Application Date:2021-07-14
Authorization Date:2022-01-07
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