Over 1.2 GW cm-2 β-Ga2O3 SBD with Vbr of 1.93 kV realized by O2 plasma and annealing
Impact Factor:2.1
Affiliation of Author(s):物理科学与工程学院
Journal:SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Place of Publication:TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
Co-author:Huili Tang
Indexed by:Periodical papers
Volume:40
Issue:6
ISSN No.:0268-1242
Translation or Not:no
Date of Publication:2025-01-01
Included Journals:WOS
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